Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 42
Page 29
... stress properties of the film as a result of heating the film to 450 ° C . However , the film appears to stabilize after the initial heat treatment , such that subsequent heat treatments have a minimal effect on the film stress ...
... stress properties of the film as a result of heating the film to 450 ° C . However , the film appears to stabilize after the initial heat treatment , such that subsequent heat treatments have a minimal effect on the film stress ...
Page 83
... stress is shown in Fig.5 . Stress measurements of unmetallized and metallized samples behaved differently from each other , showing the effect of metallization on stress . Irreversible changes in the stress of bare PP and SP ...
... stress is shown in Fig.5 . Stress measurements of unmetallized and metallized samples behaved differently from each other , showing the effect of metallization on stress . Irreversible changes in the stress of bare PP and SP ...
Page 97
... Stress ( MPa ) 102 101 Over aged Figure 10. Changes in gel microstructure as a function of the extent of aging . 10 ° Capillary stress , y = 20 dyne / cm Capillary stress , y = 70 dyne / cm Gel stress , K = 0.6 MPa , m = 3 O Gel stress ...
... Stress ( MPa ) 102 101 Over aged Figure 10. Changes in gel microstructure as a function of the extent of aging . 10 ° Capillary stress , y = 20 dyne / cm Capillary stress , y = 70 dyne / cm Gel stress , K = 0.6 MPa , m = 3 O Gel stress ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber