Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 29
... stress properties of the film as a result of heating the film to 450 ° C . However , the film appears to stabilize after the initial heat treatment , such that subsequent heat treatments have a minimal effect on the film stress ...
... stress properties of the film as a result of heating the film to 450 ° C . However , the film appears to stabilize after the initial heat treatment , such that subsequent heat treatments have a minimal effect on the film stress ...
Page 83
... stress is shown in Fig.5 . Stress measurements of unmetallized and metallized samples behaved differently from each other , showing the effect of metallization on stress . Irreversible changes in the stress of bare PP and SP ...
... stress is shown in Fig.5 . Stress measurements of unmetallized and metallized samples behaved differently from each other , showing the effect of metallization on stress . Irreversible changes in the stress of bare PP and SP ...
Page 97
... Stress ( MPa ) 102 101 Over aged Figure 10. Changes in gel microstructure as a function of the extent of aging . 10 ° Capillary stress , y = 20 dyne / cm Capillary stress , y = 70 dyne / cm Gel stress , K = 0.6 MPa , m = 3 O Gel stress ...
... Stress ( MPa ) 102 101 Over aged Figure 10. Changes in gel microstructure as a function of the extent of aging . 10 ° Capillary stress , y = 20 dyne / cm Capillary stress , y = 70 dyne / cm Gel stress , K = 0.6 MPa , m = 3 O Gel stress ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films