Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 7
... structures : TM Dow Corning's FOX TM is an example of the caged structure ( to date , the caged structure has been more highly studied than the branched structure ) . This material has several attributes , including an ɛ of about 3 ...
... structures : TM Dow Corning's FOX TM is an example of the caged structure ( to date , the caged structure has been more highly studied than the branched structure ) . This material has several attributes , including an ɛ of about 3 ...
Page 59
... structure ( flexibility , polarity ) of various linking groups . INTRODUCTION Shrinking dimensions of the structures on integrated circuits have led to a need for interlayer dielectric materials with dielectric constants well below € 3 ...
... structure ( flexibility , polarity ) of various linking groups . INTRODUCTION Shrinking dimensions of the structures on integrated circuits have led to a need for interlayer dielectric materials with dielectric constants well below € 3 ...
Page 68
... structure 11 ) determines the activation energy and hence the temperature needed for this decomposition reaction . In case of the polymers 16 the ketocarbene is unsubstituted , and no stabilization is possible . In contrast , there is a ...
... structure 11 ) determines the activation energy and hence the temperature needed for this decomposition reaction . In case of the polymers 16 the ketocarbene is unsubstituted , and no stabilization is possible . In contrast , there is a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films