Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 71
... studied with FTIR . The highest degree of the depolymerization is reached with thermal curing between 225 and 275 ° C . Introduction Polyimides are increasingly used in integrated circuits as interlayer dielectric ( ILD ) materials due ...
... studied with FTIR . The highest degree of the depolymerization is reached with thermal curing between 225 and 275 ° C . Introduction Polyimides are increasingly used in integrated circuits as interlayer dielectric ( ILD ) materials due ...
Page 79
... studied . The types of polymers in this study include sputtered Teflon , plasma - deposited fluoropolymers and the soluble Teflon AF1600 . All these fluoropolymers have dielectric constants below 2.0 and dissipation factors below 0.001 ...
... studied . The types of polymers in this study include sputtered Teflon , plasma - deposited fluoropolymers and the soluble Teflon AF1600 . All these fluoropolymers have dielectric constants below 2.0 and dissipation factors below 0.001 ...
Page 195
... studied materials concerning both its basic properties as well as integration - related issues [ 1 , 8-12 ] . It is commercially available from the Dow Corning Corporation by the name of Flowable Oxide ( FOX ) . The material is well ...
... studied materials concerning both its basic properties as well as integration - related issues [ 1 , 8-12 ] . It is commercially available from the Dow Corning Corporation by the name of Flowable Oxide ( FOX ) . The material is well ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber