Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 43
Page 149
... substrate type , likely occurred due to desorption of H2O in the films . After annealing of the high F content films up to 400 ° C , a reduction in F content was found for SiOF films on some substrates . Significant reductions were ...
... substrate type , likely occurred due to desorption of H2O in the films . After annealing of the high F content films up to 400 ° C , a reduction in F content was found for SiOF films on some substrates . Significant reductions were ...
Page 152
... substrate type , F content , and anneal temperature . A. Dependence on Substrate B. Dependence on F Content C. Dependence on Anneal Temp . Sample Cap . Change Sample Cap . Change Sample 11 % F -2.4 % 11 % F -3.3 % 11 % F Cap . Change ...
... substrate type , F content , and anneal temperature . A. Dependence on Substrate B. Dependence on F Content C. Dependence on Anneal Temp . Sample Cap . Change Sample Cap . Change Sample 11 % F -2.4 % 11 % F -3.3 % 11 % F Cap . Change ...
Page 166
... substrate , and a bias power was applied to the substrate . The gap- filling properties of the a - C : F film were investigated using a TiN / AlSiCu / TiN line - and - space pattern ( width 0.5 μm , space 0.35 μm , height 0.65 μm ) ...
... substrate , and a bias power was applied to the substrate . The gap- filling properties of the a - C : F film were investigated using a TiN / AlSiCu / TiN line - and - space pattern ( width 0.5 μm , space 0.35 μm , height 0.65 μm ) ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber