Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 149
THERMAL STABILITY OF FLUORINATED SiO2 FILMS : EFFECTS OF
HYDRATION AND FILM - SUBSTRATE ... stability of fluorinated SiO2 films ( SiOF
) was found to be dependent on F content and the type of substrate upon which
the film ...
THERMAL STABILITY OF FLUORINATED SiO2 FILMS : EFFECTS OF
HYDRATION AND FILM - SUBSTRATE ... stability of fluorinated SiO2 films ( SiOF
) was found to be dependent on F content and the type of substrate upon which
the film ...
Page 152
Table I . Capacitance change following annealing , referenced to unannealed
samples , as a function of substrate type , F content , and anneal temperature . A .
Dependence on Substrate B . Dependence on F Content C . Dependence on ...
Table I . Capacitance change following annealing , referenced to unannealed
samples , as a function of substrate type , F content , and anneal temperature . A .
Dependence on Substrate B . Dependence on F Content C . Dependence on ...
Page 166
To apply amorphous carbon film for the magnet gas inlet multilevel
interconnection of integrated circuits , we must be able to fill the wiring gaps
completely with the a - C : F substrate film . Then , the deposition of the a - C : F
film will be followed ...
To apply amorphous carbon film for the magnet gas inlet multilevel
interconnection of integrated circuits , we must be able to fill the wiring gaps
completely with the a - C : F substrate film . Then , the deposition of the a - C : F
film will be followed ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel