Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 101
... surface silanol groups also formed Si - O - Si bonds through condensation reactions during drying , causing permanent shrinkage of the film . To reduce moisture adsorption and film shrinkage during drying , the surface hydroxyl groups ...
... surface silanol groups also formed Si - O - Si bonds through condensation reactions during drying , causing permanent shrinkage of the film . To reduce moisture adsorption and film shrinkage during drying , the surface hydroxyl groups ...
Page 103
... surface areas , the moisture content in xerogel films could be substantial , as shown in the FTIR spectrum of such a film ( Figure 4a ) . Surface chemical modification reduced the amount of surface Si - OH groups and made the films ...
... surface areas , the moisture content in xerogel films could be substantial , as shown in the FTIR spectrum of such a film ( Figure 4a ) . Surface chemical modification reduced the amount of surface Si - OH groups and made the films ...
Page 161
... surface layer , as will be discussed in subsequent sections . The etch rate decreases with increasing Si content ... surface layer of the SiDLC film with increasing etching time and can clearly be seen after 10 min . of etching . The Si ...
... surface layer , as will be discussed in subsequent sections . The etch rate decreases with increasing Si content ... surface layer of the SiDLC film with increasing etching time and can clearly be seen after 10 min . of etching . The Si ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films