Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 101
... surface silanol groups also formed Si - O - Si bonds through condensation reactions during drying , causing permanent shrinkage of the film . To reduce moisture adsorption and film shrinkage during drying , the surface hydroxyl groups ...
... surface silanol groups also formed Si - O - Si bonds through condensation reactions during drying , causing permanent shrinkage of the film . To reduce moisture adsorption and film shrinkage during drying , the surface hydroxyl groups ...
Page 103
... surface areas , the moisture content in xerogel films could be substantial , as shown in the FTIR spectrum of such a film ( Figure 4a ) . Surface chemical modification reduced the amount of surface Si - OH groups and made the films ...
... surface areas , the moisture content in xerogel films could be substantial , as shown in the FTIR spectrum of such a film ( Figure 4a ) . Surface chemical modification reduced the amount of surface Si - OH groups and made the films ...
Page 161
... surface layer , as will be discussed in subsequent sections . The etch rate decreases with increasing Si content ... surface layer of the SiDLC film with increasing etching time and can clearly be seen after 10 min . of etching . The Si ...
... surface layer , as will be discussed in subsequent sections . The etch rate decreases with increasing Si content ... surface layer of the SiDLC film with increasing etching time and can clearly be seen after 10 min . of etching . The Si ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber