Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 101
These surface hydroxyl groups were the primary sites for moisture adsorption ,
which would increase the dielectric permittivity and cause metal interconnect
integration problems . The surface silanol groups also formed Si - O - Si bonds ...
These surface hydroxyl groups were the primary sites for moisture adsorption ,
which would increase the dielectric permittivity and cause metal interconnect
integration problems . The surface silanol groups also formed Si - O - Si bonds ...
Page 103
SURFACE TREATMENT Untreated silica xerogel films contained a large amount
of Si - OH at pore surfaces and readily adsorbed water . Due to their high porosity
and large surface areas , the moisture content in xerogel films could be ...
SURFACE TREATMENT Untreated silica xerogel films contained a large amount
of Si - OH at pore surfaces and readily adsorbed water . Due to their high porosity
and large surface areas , the moisture content in xerogel films could be ...
Page 161
for the S3 film and is related to the time needed to grow a steady - state Si0 , - rich
surface layer , as will be discussed in subsequent sections . The etch rate
decreases with increasing Si content , with steady - state etch rates of 15 . 2 + 1 .
0 , 5 .
for the S3 film and is related to the time needed to grow a steady - state Si0 , - rich
surface layer , as will be discussed in subsequent sections . The etch rate
decreases with increasing Si content , with steady - state etch rates of 15 . 2 + 1 .
0 , 5 .
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
21 other sections not shown
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |