Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 91
Page 29
... temperature ( Tg ) and melting temperature ( Tm ) . The glass transition temperature ( Tg ) is observed due to the presence of amorphous region of a polymer while a crystalline melting ( Tm ) due to the presence of crystalline regions ...
... temperature ( Tg ) and melting temperature ( Tm ) . The glass transition temperature ( Tg ) is observed due to the presence of amorphous region of a polymer while a crystalline melting ( Tm ) due to the presence of crystalline regions ...
Page 96
... temperature does not change as a result of evaporation which implies that the wet bulb temperature is equal to the ambient temperature ) . 2 ) There is no effect of silica or porosity on the solvent's equilibrium vapor pressure . 3 ...
... temperature does not change as a result of evaporation which implies that the wet bulb temperature is equal to the ambient temperature ) . 2 ) There is no effect of silica or porosity on the solvent's equilibrium vapor pressure . 3 ...
Page 199
... temperature Tcure = 350 ° C . The data presented here can be understood within the following model . The well - known cage - like microstructure is fully built - up at the recommended cure temperature of 400 ° C . These films show a ...
... temperature Tcure = 350 ° C . The data presented here can be understood within the following model . The well - known cage - like microstructure is fully built - up at the recommended cure temperature of 400 ° C . These films show a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber