Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 29
... temperature ( Tg ) and melting temperature ( Tm ) . The glass transition temperature ( Tg ) is observed due to the presence of amorphous region of a polymer while a crystalline melting ( Tm ) due to the presence of crystalline regions ...
... temperature ( Tg ) and melting temperature ( Tm ) . The glass transition temperature ( Tg ) is observed due to the presence of amorphous region of a polymer while a crystalline melting ( Tm ) due to the presence of crystalline regions ...
Page 96
... temperature does not change as a result of evaporation which implies that the wet bulb temperature is equal to the ambient temperature ) . 2 ) There is no effect of silica or porosity on the solvent's equilibrium vapor pressure . 3 ...
... temperature does not change as a result of evaporation which implies that the wet bulb temperature is equal to the ambient temperature ) . 2 ) There is no effect of silica or porosity on the solvent's equilibrium vapor pressure . 3 ...
Page 199
... temperature Tcure = 350 ° C . The data presented here can be understood within the following model . The well - known cage - like microstructure is fully built - up at the recommended cure temperature of 400 ° C . These films show a ...
... temperature Tcure = 350 ° C . The data presented here can be understood within the following model . The well - known cage - like microstructure is fully built - up at the recommended cure temperature of 400 ° C . These films show a ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films