Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 50
... Tensile Strength ( MPa ) Strain Modulus ( % ) ( MPa ) PI - Si ( OME ) 3 10,000 8,900 0.17 542 491 500 % 110 8 2100 20,000 17,000 0.24 546 485 1000 % 103 14 1850 Figure 2. ( a ) Preparation of the functionalized precursor polymer PAE ...
... Tensile Strength ( MPa ) Strain Modulus ( % ) ( MPa ) PI - Si ( OME ) 3 10,000 8,900 0.17 542 491 500 % 110 8 2100 20,000 17,000 0.24 546 485 1000 % 103 14 1850 Figure 2. ( a ) Preparation of the functionalized precursor polymer PAE ...
Page 88
... stress . If the shear stress caused by the heating exceeds the strength of the interface , then delamination can occur . The test is limited in that it essentially has no tensile component and it is not quantitative . In addition , it ...
... stress . If the shear stress caused by the heating exceeds the strength of the interface , then delamination can occur . The test is limited in that it essentially has no tensile component and it is not quantitative . In addition , it ...
Page 180
... stress ( MPa ) 32 30 40 tensile strength ( MPa ) 85 54 * 66 tensile modulus ( MPa ) 2000 1900 * 2270 elongation at break ( % ) 6 3.6 * 4.1 * These measurements are for FLARE version 1.51 ; measurements for 1.0 are expected to be similar ...
... stress ( MPa ) 32 30 40 tensile strength ( MPa ) 85 54 * 66 tensile modulus ( MPa ) 2000 1900 * 2270 elongation at break ( % ) 6 3.6 * 4.1 * These measurements are for FLARE version 1.51 ; measurements for 1.0 are expected to be similar ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber