Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 88
Page 26
... thermal stability of parylene AF - 4 thin films by thermal gravimetric analysis ( TGA ) . In the past , efforts have been made to evaluate thermal stability of parylene AF - 4 thick free standing films . 18 17 Chow et al.16 determined ...
... thermal stability of parylene AF - 4 thin films by thermal gravimetric analysis ( TGA ) . In the past , efforts have been made to evaluate thermal stability of parylene AF - 4 thick free standing films . 18 17 Chow et al.16 determined ...
Page 59
... Thermal stability ( at least 450 ° C for up to 2 h ) , moisture absorption ( below 1 % ) , good adhesion to the substrate , glass transition temperature , coefficient of thermal expansion , me- chanical stability , planarization and ...
... Thermal stability ( at least 450 ° C for up to 2 h ) , moisture absorption ( below 1 % ) , good adhesion to the substrate , glass transition temperature , coefficient of thermal expansion , me- chanical stability , planarization and ...
Page 132
... thermal oxide film ( ~ 30 ° ) . A possible explanation for the high degree of contact angle on the as - deposited FSG film is the abrupt termination of the oxide network with Si - F bonds and some dangling -F bonds . However , after the ...
... thermal oxide film ( ~ 30 ° ) . A possible explanation for the high degree of contact angle on the as - deposited FSG film is the abrupt termination of the oxide network with Si - F bonds and some dangling -F bonds . However , after the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber