Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 5
Page 6
... thermal expansion , but also with higher out - of - plane thermal expansion and lower out - of - plane modulus . Insofar as IC processing and reliability are concerned , the relative importance of these trade offs , in fluorinated ...
... thermal expansion , but also with higher out - of - plane thermal expansion and lower out - of - plane modulus . Insofar as IC processing and reliability are concerned , the relative importance of these trade offs , in fluorinated ...
Page 9
... thermal exposures on crystallinity ( and thus mechanical and other properties ) in the materials is an important ... expansion coefficient ( 90 ppm / ° C ) , and fairly low elongation ( 4 % ) , undoubtedly due to the high degree of ...
... thermal exposures on crystallinity ( and thus mechanical and other properties ) in the materials is an important ... expansion coefficient ( 90 ppm / ° C ) , and fairly low elongation ( 4 % ) , undoubtedly due to the high degree of ...
Page 15
... thermal , mechanical and electrical properties , polyimide has received wide use in microelectronics as a dielectric ... expansion measurements have been traditionally performed in the direction along the film plane . Recent work has shown ...
... thermal , mechanical and electrical properties , polyimide has received wide use in microelectronics as a dielectric ... expansion measurements have been traditionally performed in the direction along the film plane . Recent work has shown ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber