Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 11
In addition to possessing higher thermal stability than other low e materials ,
attributes of nanoporous silica include the ability to tailor the density and porosity
( and thus e ) over a wide range , and the ability to form relatively thick films ( 2 1
um ) ...
In addition to possessing higher thermal stability than other low e materials ,
attributes of nanoporous silica include the ability to tailor the density and porosity
( and thus e ) over a wide range , and the ability to form relatively thick films ( 2 1
um ) ...
Page 26
THERMAL STABILITY Major challenges for using thin films of organic polymers
are thermal stability , chemical stability , and mechanical properties . The choice
of polymer lies in its ability to satisfy design and processing considerations .
THERMAL STABILITY Major challenges for using thin films of organic polymers
are thermal stability , chemical stability , and mechanical properties . The choice
of polymer lies in its ability to satisfy design and processing considerations .
Page 59
Based on these examples , the influence of the chemical structure of the
polymers on properties such as glass transition temperature , solubility , and
thermal stability will be discussed . Structural parameters studied are the number
and nature ...
Based on these examples , the influence of the chemical structure of the
polymers on properties such as glass transition temperature , solubility , and
thermal stability will be discussed . Structural parameters studied are the number
and nature ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
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absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel