Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 86
... thickness , index of refraction , FTIR , dielectric constant , and dielectric strength were obtained by NDL . All reported data on adhesion , thermal stability , and gap - fill were obtained by Gore . Thickness Thickness data for a ...
... thickness , index of refraction , FTIR , dielectric constant , and dielectric strength were obtained by NDL . All reported data on adhesion , thermal stability , and gap - fill were obtained by Gore . Thickness Thickness data for a ...
Page 159
... Thickness and IR absorbance changes after annealing DLC at 400 ° C : solid markers show thickness changes ; open markers show changes in FTIR peak intensity . Figure 6 ( right ) . Thickness changes after annealing and internal stresses ...
... Thickness and IR absorbance changes after annealing DLC at 400 ° C : solid markers show thickness changes ; open markers show changes in FTIR peak intensity . Figure 6 ( right ) . Thickness changes after annealing and internal stresses ...
Page 163
... thickness increases with etching time . For $ 5 and S9 , O , RIE produces SiO , -rich films whose steady - state thickness remains small . These thin SiO , films very effectively reduce the SiDLC etching rate in oxygen plasma . Based on ...
... thickness increases with etching time . For $ 5 and S9 , O , RIE produces SiO , -rich films whose steady - state thickness remains small . These thin SiO , films very effectively reduce the SiDLC etching rate in oxygen plasma . Based on ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber