Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 11
Page 71
... transform infrared ( FTIR ) spectroscopy by examining the degree of the imidization as function of the defined parameters ( temperature , time , and film thickness ) . Also , other transformations occurring simultaneously during thermal ...
... transform infrared ( FTIR ) spectroscopy by examining the degree of the imidization as function of the defined parameters ( temperature , time , and film thickness ) . Also , other transformations occurring simultaneously during thermal ...
Page 72
... Transform IR Spectrometry The FTIR spectrometry used is a Perkin - Elmer 1800 double beam system . The spectra were recorded in a transmission mode . All spectra were taken at 2 wave number resolution and represent the accumulation of ...
... Transform IR Spectrometry The FTIR spectrometry used is a Perkin - Elmer 1800 double beam system . The spectra were recorded in a transmission mode . All spectra were taken at 2 wave number resolution and represent the accumulation of ...
Page 150
... Transform Infrared ( FTIR ) spectroscopy were performed on SiOF layers on Si substrates . RBS and elastic recoil detection ( ERD ) of hydrogen were performed on samples on all types of substrates . High resolution transmission electron ...
... Transform Infrared ( FTIR ) spectroscopy were performed on SiOF layers on Si substrates . RBS and elastic recoil detection ( ERD ) of hydrogen were performed on samples on all types of substrates . High resolution transmission electron ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber