Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 121
... treatment beforehand appears to have H- OH and Si - OH peaks appearing at around 3400 and 3700 cm1 . These spectra clearly show that the O2 plasma treated SiOF film has lower moisture absorptivity than the non - treated film . The O2 ...
... treatment beforehand appears to have H- OH and Si - OH peaks appearing at around 3400 and 3700 cm1 . These spectra clearly show that the O2 plasma treated SiOF film has lower moisture absorptivity than the non - treated film . The O2 ...
Page 122
... treatment SI - OH O , plasma treatment 4000 3600 3200 2800 2400 1000 400 3000 3200 Wavenumber ( cm - 1 ) ( a ) 3400 3600 Wavenumber ( cm - 1 ) ( b ) 3800 4000 Fig . 4 FTIR spectra of SiOF films exposed to the atmosphere for 7 days ...
... treatment SI - OH O , plasma treatment 4000 3600 3200 2800 2400 1000 400 3000 3200 Wavenumber ( cm - 1 ) ( a ) 3400 3600 Wavenumber ( cm - 1 ) ( b ) 3800 4000 Fig . 4 FTIR spectra of SiOF films exposed to the atmosphere for 7 days ...
Page 124
... treatment on the moisture absorption and dielectric properties of SiOF films . Furthermore , the reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIS are investigated . The effect of post plasma ...
... treatment on the moisture absorption and dielectric properties of SiOF films . Furthermore , the reliability of SiOF films for intermetal dielectrics in multilevel interconnections of ULSIS are investigated . The effect of post plasma ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber