Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 6
Specifically , the relatively higher & of polyimides in - plane relative to their out -
of - plane values will tend to increase capacitance in the circuit ( when compared
to an isotropic material with the same out - of - plane € ) . Fluorinated polyimides
...
Specifically , the relatively higher & of polyimides in - plane relative to their out -
of - plane values will tend to increase capacitance in the circuit ( when compared
to an isotropic material with the same out - of - plane € ) . Fluorinated polyimides
...
Page 81
Subsequent exposure to air caused slight increases in the dielectric constant
values , which returned to their former values on evacuation . With the exception
of PP ( C2F3H ) , which frequently short circuited above room temperature , all
other ...
Subsequent exposure to air caused slight increases in the dielectric constant
values , which returned to their former values on evacuation . With the exception
of PP ( C2F3H ) , which frequently short circuited above room temperature , all
other ...
Page 92
Loss values were in the range of 0 . 0005 to 0 . 07 and a dramatic effect of
adsorbed water on loss was noted ( no effort was made to passivate the surface )
. For silica density values less than 1 g / cm ' ( porosity > 55 % ) , the dielectric
constant ...
Loss values were in the range of 0 . 0005 to 0 . 07 and a dramatic effect of
adsorbed water on loss was noted ( no effort was made to passivate the surface )
. For silica density values less than 1 g / cm ' ( porosity > 55 % ) , the dielectric
constant ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel
Bibliographic information
| Title | Low-dielectric Constant Materials Materials Research Society symposia proceedings |
| Publisher | Materials Research Society, 1996 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 1558993479, 9781558993471 |
| Export Citation | BiBTeX EndNote RefMan |