Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 36
... various metals used to form the interconnect wiring . Also , an interface formed when the polymer is applied onto a given metal is usually different than the interface formed when the same metal is deposited onto the polymer . A robust ...
... various metals used to form the interconnect wiring . Also , an interface formed when the polymer is applied onto a given metal is usually different than the interface formed when the same metal is deposited onto the polymer . A robust ...
Page 63
... various bisphe- nols Table 2 : Structures and molar masses of the poly ( arylether thiazole ) s 15 Polymer No. Y Phenylring n M1a ) / g.mol - 1 W Ma ) /g.mol-1 15a -O- para 16 900 78 500 15b -C ( CH3 ) 2- para 18 900 69 000 15c -CO ...
... various bisphe- nols Table 2 : Structures and molar masses of the poly ( arylether thiazole ) s 15 Polymer No. Y Phenylring n M1a ) / g.mol - 1 W Ma ) /g.mol-1 15a -O- para 16 900 78 500 15b -C ( CH3 ) 2- para 18 900 69 000 15c -CO ...
Page 80
... various thermal conditions . We evaluated the dielectric properties of various fluoropolymer structures sandwiched between evaporated copper electrodes . Thermal stability was also evaluated by thermally cycling the samples ...
... various thermal conditions . We evaluated the dielectric properties of various fluoropolymer structures sandwiched between evaporated copper electrodes . Thermal stability was also evaluated by thermally cycling the samples ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber