Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page x
... Volume 421- Compound Semiconductor Electronics and Photonics , R.J. Shul , S.J. Pearton , F. Ren , C - S . Wu , 1996 , ISBN : 1-55899-324 - X Volume 422- Rare - Earth Doped Semiconductors II , S. Coffa , A. Polman , R.N. Schwartz , 1996 ...
... Volume 421- Compound Semiconductor Electronics and Photonics , R.J. Shul , S.J. Pearton , F. Ren , C - S . Wu , 1996 , ISBN : 1-55899-324 - X Volume 422- Rare - Earth Doped Semiconductors II , S. Coffa , A. Polman , R.N. Schwartz , 1996 ...
Page xi
... Volume 445- Electronic Packaging Materials Science IX , P.S. Ho , S.K. Groothuis , K. Ishida , T. Wu , 1997 , ISBN : 1-55899-349-5 Volume 446— Amorphous and Crystalline Insulating Thin Films - 1996 , W.L. Warren , J. Kanicki , R.A.B. ...
... Volume 445- Electronic Packaging Materials Science IX , P.S. Ho , S.K. Groothuis , K. Ishida , T. Wu , 1997 , ISBN : 1-55899-349-5 Volume 446— Amorphous and Crystalline Insulating Thin Films - 1996 , W.L. Warren , J. Kanicki , R.A.B. ...
Page 67
... volume . In general , an increase in free volume can be expected to cause a drop in T , since there is more room for cooperative chain motions , and less thermal energy is required to start segment movements . Second , the substituent ...
... volume . In general , an increase in free volume can be expected to cause a drop in T , since there is more room for cooperative chain motions , and less thermal energy is required to start segment movements . Second , the substituent ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber