Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 38
... wafer . During the initial heating , the curvature varies linearly , indicating elastic interactions between the wafer and the attached films . At 250 ° C the slope increases from the elastic interaction value , and the curvature dips ...
... wafer . During the initial heating , the curvature varies linearly , indicating elastic interactions between the wafer and the attached films . At 250 ° C the slope increases from the elastic interaction value , and the curvature dips ...
Page 88
... wafer processing . In this test , a silicon wafer is coated as follows : 1um SiO2 , 1 μm PTFE , and 1μm SiO2 . The wafer is then rapidly lowered onto a hot plate at 400 ° C . The wafer heats from room temperature to 400 ° C in about 1 ...
... wafer processing . In this test , a silicon wafer is coated as follows : 1um SiO2 , 1 μm PTFE , and 1μm SiO2 . The wafer is then rapidly lowered onto a hot plate at 400 ° C . The wafer heats from room temperature to 400 ° C in about 1 ...
Page 96
... wafer during and after deposition ( necessary to prevent explosive concentrations of solvent in the surrounding air ) , 4 ) the practical necessity of performing deposition at ambient temperatures , and 5 ) the relative volatility and ...
... wafer during and after deposition ( necessary to prevent explosive concentrations of solvent in the surrounding air ) , 4 ) the practical necessity of performing deposition at ambient temperatures , and 5 ) the relative volatility and ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber