Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 128
... wafers was used as a reference . Si - Rich oxide ( SRO ) layers were deposited on some of the FSG films as a capping layer without breaking the vacuum between the depositions . The thickness of the SRO films was 2000 Å and 5000 Å . The ...
... wafers was used as a reference . Si - Rich oxide ( SRO ) layers were deposited on some of the FSG films as a capping layer without breaking the vacuum between the depositions . The thickness of the SRO films was 2000 Å and 5000 Å . The ...
Page 184
... wafers with thickness and fluorine uniformities under 4 % and 0.2 atomic percent were obtained , respectively . Dielectric constant measurements , made using lithographically patterned and etched test sites , gave relative dielectric ...
... wafers with thickness and fluorine uniformities under 4 % and 0.2 atomic percent were obtained , respectively . Dielectric constant measurements , made using lithographically patterned and etched test sites , gave relative dielectric ...
Page 185
... wafers were tested per wafer lot . SiO2 Control SiOF Process Si - F / Si - O Ratio Via # of ( μm ) Lots 50 % 90 / 98 ... Wafers with low medians and standard deviations have much lower resistance increases than wafers with higher medians ...
... wafers were tested per wafer lot . SiO2 Control SiOF Process Si - F / Si - O Ratio Via # of ( μm ) Lots 50 % 90 / 98 ... Wafers with low medians and standard deviations have much lower resistance increases than wafers with higher medians ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films