Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 101
... Wavelength ( um ) Figure 1. Spectroscopic ellipsometry measurements of porous silica films . Measured data fitted well with the SiO2 + air model . ( -- model , Deasured data ) . Metal - insulator - semiconductor ( MIS ) test structures ...
... Wavelength ( um ) Figure 1. Spectroscopic ellipsometry measurements of porous silica films . Measured data fitted well with the SiO2 + air model . ( -- model , Deasured data ) . Metal - insulator - semiconductor ( MIS ) test structures ...
Page 105
... wavelength was 1.16 , indicating that these films are potentially useful as low K interlayer dielectrics . INTRODUCTION Porous silica films are potentially useful as interlayer dielectrics ( ILD ) in advanced semiconductor devices . The ...
... wavelength was 1.16 , indicating that these films are potentially useful as low K interlayer dielectrics . INTRODUCTION Porous silica films are potentially useful as interlayer dielectrics ( ILD ) in advanced semiconductor devices . The ...
Page 108
... wavelength of calcined films as a function of the CTAC / TEOS mole ratio . The index of refraction gives an indication of the dielectric constant as the square of the index of refraction is equal to the dielectric constant at high ...
... wavelength of calcined films as a function of the CTAC / TEOS mole ratio . The index of refraction gives an indication of the dielectric constant as the square of the index of refraction is equal to the dielectric constant at high ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber