Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 195
... wet etch rate , and in - plane stress were monitored . Chemical composition and moisture absorption were studied by Fourier - transform infra - red ( FTIR ) and thermal desorption spectroscopy ( TDS ) . 195 Mat . Res . Soc . Symp . Proc ...
... wet etch rate , and in - plane stress were monitored . Chemical composition and moisture absorption were studied by Fourier - transform infra - red ( FTIR ) and thermal desorption spectroscopy ( TDS ) . 195 Mat . Res . Soc . Symp . Proc ...
Page 196
... wet etch rate [ A / min ] 1200 900 600 300 300 400 500 600 700 800 900 cure temperature [ ° C ] Fig.2 Wet etch rate in 200 : 1 diluted HF . as high as 20 % . For Tcure = 600 196.
... wet etch rate [ A / min ] 1200 900 600 300 300 400 500 600 700 800 900 cure temperature [ ° C ] Fig.2 Wet etch rate in 200 : 1 diluted HF . as high as 20 % . For Tcure = 600 196.
Page 199
... wet etch rate decreases , silane fragments no longer desorb in such large quantities during a subsequent high temperature ramp , and the dielectric constant as well as the refractive index rise . An increase in film stress and the ...
... wet etch rate decreases , silane fragments no longer desorb in such large quantities during a subsequent high temperature ramp , and the dielectric constant as well as the refractive index rise . An increase in film stress and the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber