Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 17
Page 165
... wiring ( space 0.35 μm , height 0.65 μm ) with the a - C : F film . To protect the a - C : F film during further processing , we deposited a SiO2 film to add mechanical strength and resistance to the oxygen plasma used to remove resist ...
... wiring ( space 0.35 μm , height 0.65 μm ) with the a - C : F film . To protect the a - C : F film during further processing , we deposited a SiO2 film to add mechanical strength and resistance to the oxygen plasma used to remove resist ...
Page 167
... wiring must be completely filled with the ILD film . We investigated the gap - filling properties of a - C : F films and found that the a - C : F film deposited from C4Fg with no bias application cannot fill 0.35 - um - wide gaps as ...
... wiring must be completely filled with the ILD film . We investigated the gap - filling properties of a - C : F films and found that the a - C : F film deposited from C4Fg with no bias application cannot fill 0.35 - um - wide gaps as ...
Page 183
... wiring . INTRODUCTION There is considerable interest in fluorinated SiO2 ( FSG ) to improve the gapfill and reduce the relative dielectric constant of inter - metal dielectric ( IMD ) films [ 1,2 ] . In this paper , we discuss the ...
... wiring . INTRODUCTION There is considerable interest in fluorinated SiO2 ( FSG ) to improve the gapfill and reduce the relative dielectric constant of inter - metal dielectric ( IMD ) films [ 1,2 ] . In this paper , we discuss the ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber