Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 99
... xerogel process has been developed . Crack - free and uniform silica xerogel films up to two microns in thickness with targeted porosity were readily coated . Xerogel materials completely filled 0.3 μm wide gaps with a 2 : 1 aspect ...
... xerogel process has been developed . Crack - free and uniform silica xerogel films up to two microns in thickness with targeted porosity were readily coated . Xerogel materials completely filled 0.3 μm wide gaps with a 2 : 1 aspect ...
Page 103
... xerogel and metal line sidewalls looked straight . It can be concluded that xerogel filled gaps between patterned metal lines just as good as PETEOS trench . SURFACE TREATMENT Untreated silica xerogel films contained a large amount of ...
... xerogel and metal line sidewalls looked straight . It can be concluded that xerogel filled gaps between patterned metal lines just as good as PETEOS trench . SURFACE TREATMENT Untreated silica xerogel films contained a large amount of ...
Page 104
... xerogel films was also established . Silica xerogel films with 75 % porosity etched five ( 5 ) times faster than PETEOS under CF4 / O2 plasma etch conditions . Xerogel films with dense capping layers maintained its integrity under 700 ...
... xerogel films was also established . Silica xerogel films with 75 % porosity etched five ( 5 ) times faster than PETEOS under CF4 / O2 plasma etch conditions . Xerogel films with dense capping layers maintained its integrity under 700 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber