Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 88
... stress . If the shear stress caused by the heating ... yield stress 1-2 orders of magnitude higher . Evidence of this hypothesis is the thermal shock adhesion results . Dielectric Strength Dielectric strength ( leakage current ) for a 88.
... stress . If the shear stress caused by the heating ... yield stress 1-2 orders of magnitude higher . Evidence of this hypothesis is the thermal shock adhesion results . Dielectric Strength Dielectric strength ( leakage current ) for a 88.
Page 92
... strength increase but the pore size decreases . This suggests that the optimum density range for semiconductor applications is not the very low densities associated with K ~ 1 but rather , higher densities which yield higher strength ...
... strength increase but the pore size decreases . This suggests that the optimum density range for semiconductor applications is not the very low densities associated with K ~ 1 but rather , higher densities which yield higher strength ...
Page 97
AGING Gel point Partially aged Optimum strength 8800 The mechanical properties of nanoporous silica are not the same ... yield a continuous drop in surface area and increase in pore size . The rate of aging may be accelerated by both ...
AGING Gel point Partially aged Optimum strength 8800 The mechanical properties of nanoporous silica are not the same ... yield a continuous drop in surface area and increase in pore size . The rate of aging may be accelerated by both ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber