## Treatise on Materials Science and Technology, Volume 4 |

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Page 67

The vacancy diffusion mechanism follows the

The vacancy diffusion mechanism follows the

**displacement**of an atom on a lattice ... The rate at which such**displacements**can occur for a random atom in the ...Page 82

Now if the tracer and vacancy are on the same x plane , the vacancy has an equal probability of causing a + x or a - x

Now if the tracer and vacancy are on the same x plane , the vacancy has an equal probability of causing a + x or a - x

**displacement**for the next tracer jump ...Page 106

The vacancy may cause a tracer

The vacancy may cause a tracer

**displacement**of ( 1 ) + d with a probability Pat , or ( 2 ) -d with a probability Pīı . If ( 1 ) occurs , the vacancy may ...### What people are saying - Write a review

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### Contents

RICHARD W VOOK | 2 |

Epitaxial Monocrystalline Films | 10 |

Polycrystalline Films | 37 |

Copyright | |

6 other sections not shown

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### Common terms and phrases

activity addition alloys applied approximation average beam becomes calculated compaction component composition compression concentration considered constant copper correlation corresponding crystal cubic curve decreases defined deformation density dependence determined diffraction diffusion direction discussed dislocation disorder distribution effect electron elements energy enthalpy entropy equations example experimental expression factor fault field Figure forged function given gives increases influence interaction jump lattice material measurements mechanism metal method neighbor observed obtained occurs oriented parameter partial pattern phases Phys plane polycrystalline position possible powder present probability production properties random ratio reflections region relative respectively shown in Fig shows single crystals sintered solid solution solute atoms solvent specimen strain strengthening stress structure Substituting surface Table temperature theoretical theory thermodynamic thin films tracer twin vacancy values variations volume yield