## Treatise on Materials Science and Technology, Volume 4 |

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Page 82

After the

sites . Consider that the vacancy directly returns to the

contributes to Pa . Furthermore , the probability that the vacancy wanders off but ...

After the

**tracer**- vacancy exchange , the vacancy must be on one of these foursites . Consider that the vacancy directly returns to the

**tracer**, this probabilitycontributes to Pa . Furthermore , the probability that the vacancy wanders off but ...

Page 105

That is , when a new vacancy ( one which has not exchanged with the

becomes a neighbor with the

effective probability that the next

plane ...

That is , when a new vacancy ( one which has not exchanged with the

**tracer**)becomes a neighbor with the

**tracer**and makes a diffusive jump , P is the neteffective probability that the next

**tracer**jump will return the**tracer**to the original xplane ...

Page 106

The flux will be related to the effective

Also , U is calculated from P + and Ph . One of the vacancies contributing to Va +

arrived at the

The flux will be related to the effective

**tracer**jump rate vet . Ve + = Va + U2 ( 80 )Also , U is calculated from P + and Ph . One of the vacancies contributing to Va +

arrived at the

**tracer**. The vacancy may cause a**tracer**displacement of ( 1 ) + d ...### What people are saying - Write a review

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### Contents

RICHARD W VOOK | 2 |

Epitaxial Monocrystalline Films | 10 |

Polycrystalline Films | 37 |

Copyright | |

6 other sections not shown

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### Common terms and phrases

activity addition alloys applied approximation average beam becomes calculated compaction component composition compression concentration considered copper correlation corresponding crystal cubic curve decreases defined deformation density dependence determined diffraction diffusion direction discussed dislocation disorder distribution effect electron elements energy enthalpy entropy equations example experimental expression factor fault field Figure forged function given gives increases influence interaction jump lattice material measurements mechanism metal method neighbor observed obtained occurs oriented parameter partial pattern phases Phys plane polycrystalline position possible powder present probability production properties random ratio reflections region relative respectively shown in Fig shows single crystals sintered solid solution solute atoms solvent specimen strain strengthening stress structure Substituting surface Table temperature theoretical theory thermodynamic thin films tracer twin vacancy values variations volume X-ray yield