Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 255
... deposition . In the case of reacted coatings , some reaction may occur at the target surface , thus producing a thin surface layer of high- melting - point nitride or oxide . The presence ... DEPOSITION OF THIN FILMS 255 Thin Film Deposition.
... deposition . In the case of reacted coatings , some reaction may occur at the target surface , thus producing a thin surface layer of high- melting - point nitride or oxide . The presence ... DEPOSITION OF THIN FILMS 255 Thin Film Deposition.
Page 495
... films and 35-300 % in- creases in the film deposition rate were realized by Motojima and Mizutani [ 143 ] by irradiating TiCl4 , NH3 ( or N2 ) and H2 gas mixtures with a deuterium lamp . In the absence of the UV radiation , and using N2 ...
... films and 35-300 % in- creases in the film deposition rate were realized by Motojima and Mizutani [ 143 ] by irradiating TiCl4 , NH3 ( or N2 ) and H2 gas mixtures with a deuterium lamp . In the absence of the UV radiation , and using N2 ...
Page 609
... deposition of Ge has employed either remotely excited He or Ar , and ... film de- position . The low - temperature aspect of this process and the ... film in general , is critically dependent on substrate processing prior to film growth ...
... deposition of Ge has employed either remotely excited He or Ar , and ... film de- position . The low - temperature aspect of this process and the ... film in general , is critically dependent on substrate processing prior to film growth ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength