Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 193
... rate ) sputtering , the reactive gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate corresponding to the sputter yield for the metal surface is achieved , while nearly ...
... rate ) sputtering , the reactive gas flow is operated in the range from F1 + to F2 + . Under these operating conditions , a high deposition rate corresponding to the sputter yield for the metal surface is achieved , while nearly ...
Page 374
... flow rate , CG , and the flow rate of source materials transported out of the bubbler , s , s = CG ẞ / ( 1 - ß ) , where ß = Ps / PT , ( 2.1 ) and Ps and PT are the source partial pressure and the total pressure over the source ...
... flow rate , CG , and the flow rate of source materials transported out of the bubbler , s , s = CG ẞ / ( 1 - ß ) , where ß = Ps / PT , ( 2.1 ) and Ps and PT are the source partial pressure and the total pressure over the source ...
Page 398
... flow rates at a pressure of 78 torr and a susceptor temperature of 650 ° C . At low flow rates , the growth rate decreases in the flow direction because of the depletion of reactants . However , at high flow rates , the growth rate ...
... flow rates at a pressure of 78 torr and a susceptor temperature of 650 ° C . At low flow rates , the growth rate decreases in the flow direction because of the depletion of reactants . However , at high flow rates , the growth rate ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength