Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 345
... min 450 10000 1000 O OOD DOO 350 300 ° C SiH4 / WF6 / H2 sccm 6/25/100 Ptotal , mTorr ◊ 250 ☐ 180 100 1.4 1.5 1.6 ... a cold - wall LPCVD barrel reactor uses a temperature of 570 ° C , a pressure of 300 mtorr , and flow rates ( in sccm ) ...
... min 450 10000 1000 O OOD DOO 350 300 ° C SiH4 / WF6 / H2 sccm 6/25/100 Ptotal , mTorr ◊ 250 ☐ 180 100 1.4 1.5 1.6 ... a cold - wall LPCVD barrel reactor uses a temperature of 570 ° C , a pressure of 300 mtorr , and flow rates ( in sccm ) ...
Page 545
... a function of arsine dilution in silane . ( Reprinted from Ref . 141 by permission of the publisher , The Electrochemical Society , Inc. ) Growth Rate ( in A / min ) 1000 100 10 TTTTTT Plasma - CVD , 650C Plasma - CVD , 700C Thermal ...
... a function of arsine dilution in silane . ( Reprinted from Ref . 141 by permission of the publisher , The Electrochemical Society , Inc. ) Growth Rate ( in A / min ) 1000 100 10 TTTTTT Plasma - CVD , 650C Plasma - CVD , 700C Thermal ...
Page 810
... a minimum of substrate heating because of the lower peak power density for a given number of photons with cw sources . For thermal reactions with a scanned cw beam , rates are not necessarily linearly proportional to the beam dwell time ...
... a minimum of substrate heating because of the lower peak power density for a given number of photons with cw sources . For thermal reactions with a scanned cw beam , rates are not necessarily linearly proportional to the beam dwell time ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength