Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 385
... AsH3 [ 115-120 ] . The decomposition of arsine has been studied extensively . Early kinetic studies [ 121 ] as well as ex situ mass spectroscopy and IR studies [ 112 , 114 , 116 , 122 ] indicate that arsine decomposes heterogeneously ...
... AsH3 [ 115-120 ] . The decomposition of arsine has been studied extensively . Early kinetic studies [ 121 ] as well as ex situ mass spectroscopy and IR studies [ 112 , 114 , 116 , 122 ] indicate that arsine decomposes heterogeneously ...
Page 387
... AsH3 ) to form GaAs , and finally purging the excess AsH3 from the system . Consequently , it is important to understand the adsorption , surface reaction , and desorption kinetics . Details of the mechanism for GaAs growth with ASH3 ...
... AsH3 ) to form GaAs , and finally purging the excess AsH3 from the system . Consequently , it is important to understand the adsorption , surface reaction , and desorption kinetics . Details of the mechanism for GaAs growth with ASH3 ...
Page 488
... AsH3 at the surface , while the Hg lamp served to improve layer quality and surface morphology . Confirmation of the CO2 laser's involvement in the growth process was demonstrated by tuning the laser to the 10.531 μm absorption line of AsH3 ...
... AsH3 at the surface , while the Hg lamp served to improve layer quality and surface morphology . Confirmation of the CO2 laser's involvement in the growth process was demonstrated by tuning the laser to the 10.531 μm absorption line of AsH3 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength