Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 434
... Crystal Growth 93 , 220 ( 1988 ) . 16. P. M. Frijlink , J. Crystal Growth 93 , 207 ( 1988 ) . 17. P. Lee , D. R. McKenna , D. Kapur , and K. F. Jensen , J. Cryst . Growth 77 , 120 ( 1986 ) . 18. ( a ) M. R. Leys , C. van Opdorp ...
... Crystal Growth 93 , 220 ( 1988 ) . 16. P. M. Frijlink , J. Crystal Growth 93 , 207 ( 1988 ) . 17. P. Lee , D. R. McKenna , D. Kapur , and K. F. Jensen , J. Cryst . Growth 77 , 120 ( 1986 ) . 18. ( a ) M. R. Leys , C. van Opdorp ...
Page 435
... Crystal Growth 96 , 691 ( 1989 ) . 43. M. S. Kim , S. -K . Min , and J. S. Chun , J. Crystal Growth 74 , 21 ( 1986 ) . 44. ( a ) S. J. Hardwick , R. G. Lorentz , D. K. Weber , Solid State Technology 31 ( 10 ) , 93 ( 1988 ) . ( b ) ...
... Crystal Growth 96 , 691 ( 1989 ) . 43. M. S. Kim , S. -K . Min , and J. S. Chun , J. Crystal Growth 74 , 21 ( 1986 ) . 44. ( a ) S. J. Hardwick , R. G. Lorentz , D. K. Weber , Solid State Technology 31 ( 10 ) , 93 ( 1988 ) . ( b ) ...
Page 441
... Crystal Growth 99 , 432 ( 1990 ) . 229. P. J. Wright and B. Cockayne , J. Crystal Growth 59 , 148 ( 1982 ) . 230. D. W. Kisker , P. H. Fuosss , J. J. Krajewski , P. M. Amirtharaj , S. Nakahara , and J. Menendez , J. Crystal Growth 86 ...
... Crystal Growth 99 , 432 ( 1990 ) . 229. P. J. Wright and B. Cockayne , J. Crystal Growth 59 , 148 ( 1982 ) . 230. D. W. Kisker , P. H. Fuosss , J. J. Krajewski , P. M. Amirtharaj , S. Nakahara , and J. Menendez , J. Crystal Growth 86 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength