Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 336
... epitaxial lateral overgrowth [ 53 ] . By varying the source concentrations and addition of HCl , the etching action of chlorine- containing compounds ( e.g. , HCl ) formed during the deposition process , or intentionally added HCl , may ...
... epitaxial lateral overgrowth [ 53 ] . By varying the source concentrations and addition of HCl , the etching action of chlorine- containing compounds ( e.g. , HCl ) formed during the deposition process , or intentionally added HCl , may ...
Page 371
... epitaxial growth . Liquid phase epitaxy ( LPE ) is growth from a supersaturated solution onto a substrate [ 4 ] . This growth technique was used in the early development of many compound semiconductor devices . Limited substrate areas ...
... epitaxial growth . Liquid phase epitaxy ( LPE ) is growth from a supersaturated solution onto a substrate [ 4 ] . This growth technique was used in the early development of many compound semiconductor devices . Limited substrate areas ...
Page 409
... epitaxial information into the growing layer . Epitaxial growth can be undertaken on a variety of crystal surfaces . In general , the ( 100 ) surface of a compound semiconductor crystal is used . Growth on this crystal surface can ...
... epitaxial information into the growing layer . Epitaxial growth can be undertaken on a variety of crystal surfaces . In general , the ( 100 ) surface of a compound semiconductor crystal is used . Growth on this crystal surface can ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength