Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 304
... the substrates is typically in the transition re- gime , while continuum models apply to the main flow region . Recent TABLE III REPRESENTAtive ExampLES OF CVD REACTOR MODELS Modelling Approach 304 KLAVS F. JENSEN AND WERNER KERN.
... the substrates is typically in the transition re- gime , while continuum models apply to the main flow region . Recent TABLE III REPRESENTAtive ExampLES OF CVD REACTOR MODELS Modelling Approach 304 KLAVS F. JENSEN AND WERNER KERN.
Page 348
John L. Vossen, Werner Kern. H2 carrier gas over the heated material . Deposition in a cold - wall single wafer reactor at 650-750 ° C showed little difference in the rate of film growth , suggesting a diffusion - controlled reaction ...
John L. Vossen, Werner Kern. H2 carrier gas over the heated material . Deposition in a cold - wall single wafer reactor at 650-750 ° C showed little difference in the rate of film growth , suggesting a diffusion - controlled reaction ...
Page 559
John L. Vossen, Werner Kern. REFERENCES 1. J. R. Hollahan and R. S. Rosler , in " Thin Film Processes ” ( J. L. Vossen and W. Kern , eds . ) , Ch . IV - 1 . Academic Press , New York , 1978 . 2. B. Gorowitz , T. B. Gorczyca , and R. J. ...
John L. Vossen, Werner Kern. REFERENCES 1. J. R. Hollahan and R. S. Rosler , in " Thin Film Processes ” ( J. L. Vossen and W. Kern , eds . ) , Ch . IV - 1 . Academic Press , New York , 1978 . 2. B. Gorowitz , T. B. Gorczyca , and R. J. ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength