Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 319
... LPCVD reactors [ 271 , 272 ] . The reactor design rather than differences in the pro- cess mechanism may be an integral factor in the O2 / SiH4 ratio effect ( p . 102 in Ref . 14 ) , in particular the geometric configuration of the O2 ...
... LPCVD reactors [ 271 , 272 ] . The reactor design rather than differences in the pro- cess mechanism may be an integral factor in the O2 / SiH4 ratio effect ( p . 102 in Ref . 14 ) , in particular the geometric configuration of the O2 ...
Page 329
... LPCVD reactors [ 272 ] . LPCVD tube reactors with internal gas injectors cannot be used because the B2H6 decomposes in the hot injector tubing . Substituting BCl3 for B2H and changing the deposition conditions ( 425–450 ° C ) avoids ...
... LPCVD reactors [ 272 ] . LPCVD tube reactors with internal gas injectors cannot be used because the B2H6 decomposes in the hot injector tubing . Substituting BCl3 for B2H and changing the deposition conditions ( 425–450 ° C ) avoids ...
Page 348
... LPCVD ( as well as PECVD and laser - induced CVD ) because this material offers the lowest resistivity of all refractory silicides . The reactants are TiCl4 - SiH4 or TiCl4 - SiH2Cl2 at LPCVD temperatures of 600–800 ° C and at 0.1-10 ...
... LPCVD ( as well as PECVD and laser - induced CVD ) because this material offers the lowest resistivity of all refractory silicides . The reactants are TiCl4 - SiH4 or TiCl4 - SiH2Cl2 at LPCVD temperatures of 600–800 ° C and at 0.1-10 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength