Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 371
... ( OMVPE ) . MBE is discussed elsewhere in this book , whereas the principles and present state of OMVPE technique form the basis of this chapter . The field of OMVPE has grown considerably since its conception by H. Manasevit in the late ...
... ( OMVPE ) . MBE is discussed elsewhere in this book , whereas the principles and present state of OMVPE technique form the basis of this chapter . The field of OMVPE has grown considerably since its conception by H. Manasevit in the late ...
Page 372
... OMVPE to produce complex semiconductor systems , such as ( Al , Ga , In ) As . Source properties and decomposition and reaction behavior of these compounds will be discussed in a subsequent section . There are many labels for ...
... OMVPE to produce complex semiconductor systems , such as ( Al , Ga , In ) As . Source properties and decomposition and reaction behavior of these compounds will be discussed in a subsequent section . There are many labels for ...
Page 388
... OMVPE systems . The studies of surface reaction mechanisms discussed previously have been based on the use of UHV surface science instrumentation . However , it is not clear whether UHV results will carry over to OMVPE processes running ...
... OMVPE systems . The studies of surface reaction mechanisms discussed previously have been based on the use of UHV surface science instrumentation . However , it is not clear whether UHV results will carry over to OMVPE processes running ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength