Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 149
... RHEED . A carefully prepared GaAs wafer at first exhibits a very spotty RHEED pattern . As the sample temperature is raised for oxide desorption , the pattern changes into elon- gated streaks with increased intensity , and additional ...
... RHEED . A carefully prepared GaAs wafer at first exhibits a very spotty RHEED pattern . As the sample temperature is raised for oxide desorption , the pattern changes into elon- gated streaks with increased intensity , and additional ...
Page 150
... ( RHEED ) con- figuration , a beam of high - energy ( 6 to 50 KeV ) electrons is directed at the sample surface at a ... RHEED an integral part of the MBE process . In MBE , RHEED serves two main functions : First , its pattern conveys ...
... ( RHEED ) con- figuration , a beam of high - energy ( 6 to 50 KeV ) electrons is directed at the sample surface at a ... RHEED an integral part of the MBE process . In MBE , RHEED serves two main functions : First , its pattern conveys ...
Page 154
... RHEED intensity oscillation or other in - situ measurements . AlGaAs is more difficult to grow than GaAs . Al is reactive , and it getters background residual contaminants and incorpo- rates them in the growing layer . A growth ...
... RHEED intensity oscillation or other in - situ measurements . AlGaAs is more difficult to grow than GaAs . Al is reactive , and it getters background residual contaminants and incorpo- rates them in the growing layer . A growth ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength