Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 449
... section ( generally expressed in cm2 ) for the gas in question . Equation ( 2.1 ) is valid only when the precursor ... section of 10-18 cm2 , 3 % of the optical source energy will be absorbed over a 1 - cm path length . If σ = 10-17 cm2 ...
... section ( generally expressed in cm2 ) for the gas in question . Equation ( 2.1 ) is valid only when the precursor ... section of 10-18 cm2 , 3 % of the optical source energy will be absorbed over a 1 - cm path length . If σ = 10-17 cm2 ...
Page 502
... sections . The first section describes the sol - gel process in general . Practically , anyone should be able to make a gel after reading this section . The next section describes the sol - gel process for making coatings . Taking the ...
... sections . The first section describes the sol - gel process in general . Practically , anyone should be able to make a gel after reading this section . The next section describes the sol - gel process for making coatings . Taking the ...
Page 800
... Section III . Other purely optical effects , such as wavelength , spatial , and temporal coherence , will be considered in Section IV.A.1 . Process effects on the ultimate resolution will be considered in Section IV.A.2 . 1. Optical ...
... Section III . Other purely optical effects , such as wavelength , spatial , and temporal coherence , will be considered in Section IV.A.1 . Process effects on the ultimate resolution will be considered in Section IV.A.2 . 1. Optical ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength