Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 318
... SiH4 + O2 Reactions The most widely used deposition reaction is that of silane oxidation , which was originally published in 1967 for APCVD in a bell jar reactor [ 267 ] . Highly N2 - diluted SiH4 is mixed with O2 and passed over the ...
... SiH4 + O2 Reactions The most widely used deposition reaction is that of silane oxidation , which was originally published in 1967 for APCVD in a bell jar reactor [ 267 ] . Highly N2 - diluted SiH4 is mixed with O2 and passed over the ...
Page 343
... SiH4 at 250 ° C of up to 1 μm / min without loss of selectivity [ 477 ] . No HF was detected for the WF6 - SiH4 reaction up to 600 ° C . The overall reaction at the usual temperature of deposition ( approximately 300 ° C ) was ...
... SiH4 at 250 ° C of up to 1 μm / min without loss of selectivity [ 477 ] . No HF was detected for the WF6 - SiH4 reaction up to 600 ° C . The overall reaction at the usual temperature of deposition ( approximately 300 ° C ) was ...
Page 599
... SiH4 as determined by MS stopped , and film deposition ceased . Figure 13 presents MS data that indicate the break - up pattern in the MS ionizer of SiH4 under several different sets of conditions [ 46 , 47 ] . The first spectrum is ...
... SiH4 as determined by MS stopped , and film deposition ceased . Figure 13 presents MS data that indicate the break - up pattern in the MS ionizer of SiH4 under several different sets of conditions [ 46 , 47 ] . The first spectrum is ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength