Thin Film Processes, Volume 2 |
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Page 110
Near - stoichiometric films of many binary alloys have been deposited using this
technique . Dispersion ... Some typical examples of alloy deposition by the co -
evaporation technique are summarized in Table II . 2 . Evaporation from ...
Near - stoichiometric films of many binary alloys have been deposited using this
technique . Dispersion ... Some typical examples of alloy deposition by the co -
evaporation technique are summarized in Table II . 2 . Evaporation from ...
Page 263
C . Alloy Deposition The reproduction of alloy composition from a deposition
source to a thin film on a substrate posed significant problems historically . The
advent of sputtering , and subsequently high - rate magnetron sputtering ,
overcame ...
C . Alloy Deposition The reproduction of alloy composition from a deposition
source to a thin film on a substrate posed significant problems historically . The
advent of sputtering , and subsequently high - rate magnetron sputtering ,
overcame ...
Page 417
Control over the alloy composition and uniformity over large substrate areas is
more easily achieved in OMVPE than in other growth technologies . The control
of intentional and unintentional impurity incorporation into alloy materials often ...
Control over the alloy composition and uniformity over large substrate areas is
more easily achieved in OMVPE than in other growth technologies . The control
of intentional and unintentional impurity incorporation into alloy materials often ...
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Contents
Glow Discharge Plasmas and Sources for Etching | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys plasma possible potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol temperature thermal thickness thin film tion torr typically uniformity vacuum voltage wafer walls