Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 188
... argon ion beam up to about 10 cm diameter and typically 0.5- 1.0 mA / cm2 , with a variable beam energy in the range 500-2,000 eV with an energy spread of 1-10 eV . Applications of ion beam sputtering for device fabrication have been ...
... argon ion beam up to about 10 cm diameter and typically 0.5- 1.0 mA / cm2 , with a variable beam energy in the range 500-2,000 eV with an energy spread of 1-10 eV . Applications of ion beam sputtering for device fabrication have been ...
Page 199
... argon gas . e . Amorphous Silicon a - Si : H films have been reactively sputtered with a planar magnetron [ 156 ] . The hydrogen content of the films was controlled by adjusting the hydrogen partial pressure in the sputter discharge ...
... argon gas . e . Amorphous Silicon a - Si : H films have been reactively sputtered with a planar magnetron [ 156 ] . The hydrogen content of the films was controlled by adjusting the hydrogen partial pressure in the sputter discharge ...
Page 256
... argon or nitrogen was explored by Aksenov et al . [ 142 ] . They found that the effect was most marked in the case of a reactive metal - gas pair . For nonreactive situations , such as copper - argon , the reduced rate of erosion was ...
... argon or nitrogen was explored by Aksenov et al . [ 142 ] . They found that the effect was most marked in the case of a reactive metal - gas pair . For nonreactive situations , such as copper - argon , the reduced rate of erosion was ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength