Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 58
... atoms then becomes a function of the discharge power , which changes the local number of gas atoms that can scatter the sputtered atoms [ 25 ] . B. Electron Cyclotron Resonance ( ECR ) Sources The electron cyclotron frequency from Eq ...
... atoms then becomes a function of the discharge power , which changes the local number of gas atoms that can scatter the sputtered atoms [ 25 ] . B. Electron Cyclotron Resonance ( ECR ) Sources The electron cyclotron frequency from Eq ...
Page 409
... atoms . The presence of two back bonds is advantageous because the deposited atom is fixed in orientation relative the substrate atoms . Growth on other crystal faces does not possess such a bonding arrangement and hence is prone to the ...
... atoms . The presence of two back bonds is advantageous because the deposited atom is fixed in orientation relative the substrate atoms . Growth on other crystal faces does not possess such a bonding arrangement and hence is prone to the ...
Page 655
... atoms incident on a hot substrate , assumes that a cluster of atoms must be formed on the surface of sufficient size that the volume free energy of condensation overcomes the surface energy of the cluster , which would tend to make it ...
... atoms incident on a hot substrate , assumes that a cluster of atoms must be formed on the surface of sufficient size that the volume free energy of condensation overcomes the surface energy of the cluster , which would tend to make it ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength