Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 67
... beam . The ion beam is in reality a plasma , with a potential near ground . Therefore , the ion is decelerated by this potential difference . The net ion energy is then equiva- lent to the positive bias on the discharge chamber . The ...
... beam . The ion beam is in reality a plasma , with a potential near ground . Therefore , the ion is decelerated by this potential difference . The net ion energy is then equiva- lent to the positive bias on the discharge chamber . The ...
Page 632
... beam spot size , shape , and beam current depend on the bright- ness of the source , the quality of the column , and the beam energy . The design and performance of a particle beam column are detailed in many texts on electron ...
... beam spot size , shape , and beam current depend on the bright- ness of the source , the quality of the column , and the beam energy . The design and performance of a particle beam column are detailed in many texts on electron ...
Page 755
... beam will be deflected several degrees from its proper direction , and direct accelerator impingement will be encountered at a lower - than - normal beam current . The problem of misaligned grids is ... beam ions V - 2 . ION BEAM ETCHING 755.
... beam will be deflected several degrees from its proper direction , and direct accelerator impingement will be encountered at a lower - than - normal beam current . The problem of misaligned grids is ... beam ions V - 2 . ION BEAM ETCHING 755.
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength