Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 125
... BIAS + ve BIAS PRIMARY ELECTRON ANODE BEAM MOLTEN POOL PLASMA E. B. GUN EVAPORANT SUBSTRATE AT ANY POTENTIAL , FLOATING OR GROUNDED MOLTEN POOL + ve BIAS SUBSTRATE AT ANY POTENTIAL , FLOATING OR GROUNDED " ARE " ELECTRODE SUBSTRATE AT ...
... BIAS + ve BIAS PRIMARY ELECTRON ANODE BEAM MOLTEN POOL PLASMA E. B. GUN EVAPORANT SUBSTRATE AT ANY POTENTIAL , FLOATING OR GROUNDED MOLTEN POOL + ve BIAS SUBSTRATE AT ANY POTENTIAL , FLOATING OR GROUNDED " ARE " ELECTRODE SUBSTRATE AT ...
Page 254
... bias , with critical load increasing from 60 N at 200 ° C to 90 N at 450 ° C . Most of the benefit of bias on adhesion was gained in the bias range from zero to 100 V ; critical load increased from 35 N to 80 N. Increasing the bias ...
... bias , with critical load increasing from 60 N at 200 ° C to 90 N at 450 ° C . Most of the benefit of bias on adhesion was gained in the bias range from zero to 100 V ; critical load increased from 35 N to 80 N. Increasing the bias ...
Page 820
... bias . It is desirable to minimize the applied bias to minimize the dark etch rate in these processes . Excessive bias will swamp out PEC effects by driving the dark electrochemical reaction . An appropriate bias voltage that avoids ...
... bias . It is desirable to minimize the applied bias to minimize the dark etch rate in these processes . Excessive bias will swamp out PEC effects by driving the dark electrochemical reaction . An appropriate bias voltage that avoids ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength