Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 4
... chemical methods of film deposition . Chap- ter III.1 describes thermally induced chemical vapor deposition . It provides an update to a similar chapter in the first volume . Chapter III.2 and III.3 review two special subsets of chemical ...
... chemical methods of film deposition . Chap- ter III.1 describes thermally induced chemical vapor deposition . It provides an update to a similar chapter in the first volume . Chapter III.2 and III.3 review two special subsets of chemical ...
Page 284
... chemical vapor deposition with solid state microelectronics , a very rapidly moving technology that demands continuously improved materials and processes for the fabrication of ad- vanced semiconductor devices . Chemical vapor deposition ...
... chemical vapor deposition with solid state microelectronics , a very rapidly moving technology that demands continuously improved materials and processes for the fabrication of ad- vanced semiconductor devices . Chemical vapor deposition ...
Page 858
... vapor stream , 231 Ashing , 35 ASH3 , 455 , 456 , 458 , 488 , 664 Aspect ratio , 767-769 Asymmetric glow discharge , 25 Atmospheric pressure CVD borophosphosilicates , 328 models , 304 production systems , 310 SiO2 deposition , 319 ...
... vapor stream , 231 Ashing , 35 ASH3 , 455 , 456 , 458 , 488 , 664 Aspect ratio , 767-769 Asymmetric glow discharge , 25 Atmospheric pressure CVD borophosphosilicates , 328 models , 304 production systems , 310 SiO2 deposition , 319 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength