Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 110
... composition of the deposited film is controlled by adjusting the evaporation rate of the respective elements . In elaborate systems , separate deposition - rate monitors are used with appropriate feed- back networks to control the ...
... composition of the deposited film is controlled by adjusting the evaporation rate of the respective elements . In elaborate systems , separate deposition - rate monitors are used with appropriate feed- back networks to control the ...
Page 263
... composition in the arc process is not just a function of the rate of removal of material from the source . Resputtering at the substrate will have a significant effect on alloy composition if the sputtering yields of the alloy ...
... composition in the arc process is not just a function of the rate of removal of material from the source . Resputtering at the substrate will have a significant effect on alloy composition if the sputtering yields of the alloy ...
Page 422
... composition for ZnSexS1 - x compared to experimental data [ 229 ] . The solid composition is a nonlinear function of the vapor - phase composition . ( After Ref . 219. ) Hg1 - xCd , Te , but it can only be used at temperatures below 280 ...
... composition for ZnSexS1 - x compared to experimental data [ 229 ] . The solid composition is a nonlinear function of the vapor - phase composition . ( After Ref . 219. ) Hg1 - xCd , Te , but it can only be used at temperatures below 280 ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength