Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 40
... constant , and the particle will undergo a spiral motion . The ability to couple energy into charged particles , and in particular electrons , in a magnetic field at a constant frequency is the basis of electron cyclotron resonance ...
... constant , and the particle will undergo a spiral motion . The ability to couple energy into charged particles , and in particular electrons , in a magnetic field at a constant frequency is the basis of electron cyclotron resonance ...
Page 324
... constant of the film increased from 16 to 35 in the presence of 300 ppm H2O . Resistivity , dielectric breakdown field , and refractive index also increased [ 310 ] . Ki- netic mechanism studies of Ti - tetraisopropoxide pyrolysis under ...
... constant of the film increased from 16 to 35 in the presence of 300 ppm H2O . Resistivity , dielectric breakdown field , and refractive index also increased [ 310 ] . Ki- netic mechanism studies of Ti - tetraisopropoxide pyrolysis under ...
Page 504
... constant at 1 : 1 , 4 : 1 , and 16 : 1 . Another line is drawn from the water apex to the TEOS - ethanol binary . Along this line , the ethanol - to - TEOS molar ratio is 4 : 1 . The intersections of the constant water / TEOS lines with ...
... constant at 1 : 1 , 4 : 1 , and 16 : 1 . Another line is drawn from the water apex to the TEOS - ethanol binary . Along this line , the ethanol - to - TEOS molar ratio is 4 : 1 . The intersections of the constant water / TEOS lines with ...
Contents
Rossnagel | 12 |
A Plasma Potential | 14 |
B Floating Potential C Sheaths | 15 |
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD sample semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength